MODELING OF FILM DEPOSITION MICROELECTRONIC APPLICATIONS

Le Monde En Tique

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Ouvrage 0-12-533022-7 : MODELING OF FILM DEPOSITION MICROELECTRONIC APPLICATIONS
GENERAL DESCRIPTION OF THE SERIES
Physics of Thin Films is one of the longest running continuing series in thin film science, consisting of 22 volumes since 1963. The series contains quality studies of the properties of various thin films materials and systems. In order to be able to reflect the development of today's science and to cover all modern aspects of thin films, the series, starting with Volume 20, has moved beyond the basic physics of thin films. It now addresses the most important aspects of both inorganic and organic thin films, in both their theoretical as well as technological aspects. Therefore, in order to reflect the modern technology-oriented problems, the title has been slightly modified from Physics of Thin Films to Thin Films.
GENERAL DESCRIPTION OF THE VOLUME
This volume presents five different models of computer simulation techniques to thin film deposition as applied to modern microelectronics. The book focuses on simulation and experimental confirmation of how surfaces evolve on a microscopic scale during thin film processing in relation to semiconductor dimensions. Over the past several years, semiconductor processing has reached real limitations in the ability to control patterns, deposits, processes, and analyses of circuit features in the sub 1/2 micro scale. Computer models of deposition and etching are taking the place of many fields of experimentation. Once a model is calibrated and reliable, it can perform virtual experiments on circuit features, determining the feasibility of various design criteria without ever going into the "fab." The cost savings can be immense, and the opportunity to not only fine tune existing processes, but to develop completely new techniques outside of the lab is also an important benefit. There are two general classes of models: the molecular dynamics model and the shock-tracking model, and several chapters will cover each approach. The chapters contain general physics relevant to the model, the general mathematical construction of the model (criteria conservation laws, etc.), and a comparison of modeling and results relevant to the particular model. Each chapter covers the individual's lab approach rather than the entire field and is heavily referenced.
CONTENTS:
M.J. Brett, S.K. Dew, and T.J. Smy, Thin Film Microstructure and Process Simulation Using SIMBAD. S. Hamaguchi, Mathematical Methods for Thin Films Deposition Simulations. C.-C. Fang, V. Prasad, R.V. Joshi, F. Jones, and J.J. Hsieh, A Process Model for Sputter-Deposition of Thin Films Using Molecular Dynamics. T.S. Cale and V. Mahadev, Feature Scale Transport and Reaction during Low Pressure. Chapter References. Author Index. Subject Index.

Auteur : ROSSNAGEL
Editeur : ACADEMIC PRESS
Nombre de pages : 290
Date de publication : 11 1996

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